Samsung (8801643068684 / MZ-N6E250BW) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Connectivity: 1 x M.2 (SATA) - Disk form factor: M.2 2280 - Edition: 860 EVO | GB model & TB model
Samsung (8806088936017 / MZ-76E500B/EU) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Edition: 860 EVO - Maximum Non-operating Vibration: 20~2000Hz, 20G - Maximum Random Read 4K: 98,000 IOPS
Samsung (8801643068691 / MZ-N6E500BW) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Connectivity: 1 x M.2 (SATA) - Disk form factor: M.2 2280 - Edition: 860 EVO | SATA III & GB model
Samsung (8806088934884 / MZ-76E1T0B/EU) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Edition: 860 EVO - Maximum Non-operating Vibration: 20~2000Hz, 20G - Maximum Random Read 4K: 98,000 IOPS
Samsung (8806088934860 / MZ-76E2T0B/EU) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Bay compatible: 2.5 '' - Edition: 860 EVO - Maximum Non-operating Vibration: 20~2000Hz, 20G
Samsung (8806088934877 / MZ-76E4T0B/EU) - 4K Random Read AS SSD: Up to 98,000 IOPS - 4K Random Write AS SSD: Up to 90,000 IOPS - Edition: 860 EVO - Maximum Non-operating Vibration: 20~2000Hz, 20G - Maximum Random Read 4K: 98,000 IOPS
Samsung (8801643443757 / MZ-76Q1T0BW) - 4K Random Read AS SSD: Up to 96,000 IOPS - 4K Random Write AS SSD: Up to 89,000 IOPS - Edition: 860 QVO - Electrical Power Consumption Standby: 3 ~ 30 mW - Flash Memory Type: Samsung 32 Layer 3D V-NAND