Samsung 16 GB Internal RAM Memory

Samsung 16 GB Internal RAM Memory

The Samsung 16 GB Internal RAM Memory is a high‑performance, registered (buffered) DDR3 module designed for demanding server and workstation environments. With its robust construction and precise engineering, this memory unit delivers reliable data integrity and consistent speed across a wide range of applications.

Key Technical Specifications

• Capacity: 16 GB (16384 MB)
• Form Factor: 240‑pin DIMM
• Memory Type: DDR3 Registered (RDIMM)
• Speed: 1600 MHz (PC3-12800)
• Voltage: 1.35 V / 1.5 V (dual‑voltage support for flexible system design)
• Rank: Dual Rank (2)
• Buffering: Registered (buffered) – ensures data integrity in high‑density configurations
• Layout: 1 × 16 GB module, ideal for single‑slot or dual‑channel setups

Design and Build Quality

The module features Samsung’s proven DDR3 architecture, engineered to maintain signal integrity at high frequencies. The registered buffer reduces electrical load on the memory controller, allowing for larger memory capacities without compromising stability. Its 240‑pin DIMM design is compatible with a wide range of server and workstation motherboards that support RDIMM modules.

Performance Highlights

• High Bandwidth: The 1600 MHz clock delivers up to 12.8 GB/s per channel, enabling rapid data transfer for database servers, virtualization hosts, and compute‑intensive workloads.
• Low Latency: With a CAS latency of 11 (CL11), the module balances speed with efficient timing, ensuring quick access to frequently used data.
• Scalable Architecture: Dual‑rank design allows for easy expansion; multiple modules can be stacked in compatible systems to reach higher memory totals while preserving performance.

Ideal Use Cases

This memory module is tailored for environments where reliability and capacity are paramount. Typical applications include:

• Enterprise Servers: Database servers, file servers, and application servers that require consistent throughput.
• Virtualization Platforms: Hypervisors hosting multiple virtual machines benefit from the module’s stability and capacity.
• High‑Performance Workstations: Scientific computing, CAD/CAE workloads, and media production pipelines rely on robust memory performance.
• Data Centers: Rack‑mount servers in data centers that demand error‑free operation over long periods.

Compatibility Overview

The Samsung 16 GB RDIMM is compatible with a broad spectrum of server and workstation platforms. It has been successfully deployed in systems such as:

• Supermicro X8DA3, X8DTU‑LN4F, X9SRi‑3F
• Dell Precision R5500, PowerEdge T610/T620/T710
• Lenovo System X3550 M4, X240 Compute Node, X440 Compute Node
• HP HPE SL250S/SL270S/SL4540 Gen8
• Oracle Sun SPARC T4‑4/T5‑1B/T5‑2 Servers
• SuperServer F627R3/F617R2, F627G3, F627G2

These platforms support the module’s dual‑rank, registered configuration and can accommodate its voltage range for optimal performance.

Installation and Configuration Tips

• Ensure that the motherboard BIOS/UEFI is updated to recognize RDIMM modules at 1.35 V or 1.5 V, depending on your system’s specifications.
• When installing multiple modules, follow the manufacturer’s recommended slot population guidelines to maintain dual‑channel balance and avoid memory imbalance.
• Verify that the server’s power supply can handle the additional load when deploying several high‑capacity RDIMM modules simultaneously.

Why Choose Samsung for Server Memory?

SAMSUNG has a long history of delivering reliable, high‑density memory solutions. Their RDIMM modules are engineered with:

• Advanced Process Technology: Ensures low power consumption and high thermal efficiency.
• Rigorous Quality Control: Each module undergoes extensive testing for endurance, error rates, and thermal stability.
• Proven Compatibility: Extensive collaboration with OEMs guarantees seamless integration across diverse server architectures.

Conclusion

The Samsung 16 GB Internal RAM Memory stands out as a dependable, high‑performance solution for servers and workstations that demand robust memory capacity, low latency, and long‑term reliability. Its registered design, dual‑rank architecture, and flexible voltage support make it an excellent choice for modern data centers, virtualization environments, and compute‑intensive workloads.